View IDP23E6009_5046402.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

IDP23E60
Fast Switching Diode
Features * 600 V diode technology * Fast recovery * Soft switching * Low reverse recovery charge * Low forward voltage * Easy paralleling * Pb-free lead plating; RoHS compliant * Halogen-free according to IEC61249-2-21 * Qualified according to JEDEC for target applications
Product Summary VRRM IF VF T jmax 600 23 1.5 175
PG-TO220-2
V A V C
Type IDP23E60
Package PG-TO220-2
Ordering Code -
Marking D23E60
Pin 1 C
PIN 2 A
PIN 3 -
Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Repetitive peak reverse voltage Continous forward current
TC=25C TC=90C
Symbol VRRM IF
Value 600 41 28
Unit V A
Surge non repetitive forward current
TC=25C, tp=10 ms, sine halfwave
I FSM I FRM Ptot
89 65 W 115 65
Maximum repetitive forward current
TC=25C, tp limited by Tjmax, D=0.5
Power dissipation
TC=25C TC=90C
Operating and storage temperature Soldering temperature
wavesoldering, 1.6mm (0.063 in.) from case for 10s
Tj , Tstg TS
-55... +175 260
C C
Rev.2.4
Page 1
2009-09-28
IDP23E60
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case SMD version, device on PCB:
@ min. footprint @ 6 cm 2 cooling area
1)
Symbol min. RthJC RthJA -
Values typ. max. 1.3 75 50
Unit
K/W
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Reverse leakage current
V R=600V, Tj=25C V R=600V, Tj=150C
Symbol min. IR VF -
Values typ. max.
Unit
A 1.5 1.5 50 1900 V 2 -
Forward voltage drop
IF=23A, T j=25C IF=23A, T j=150C
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air.
Rev.2.4
Page 2
2009-04-28
IDP23E60
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics Reverse recovery time
V R=400V, IF=23A, diF/dt=1000A/s, Tj=25C V R=400V, IF=23A, diF/dt=1000A/s, Tj=125C V R=400V, IF=23A, diF/dt=1000A/s, Tj=150C
Symbol min. t rr I rrm Q rr S -
Values typ. max.
Unit
ns 120 164 170 A 17 19.5 21.5 nC 970 1580 1770 -
Peak reverse current
V R=400V, IF = 23A, diF/dt=1000A/s, Tj =25C V R=400V, IF =23A, diF/dt=1000A/s, T j=125C V R=400V, IF =23A, diF/dt=1000A/s, T j=150C
Reverse recovery charge
V R=400V, IF=23A, diF/dt=1000A/s, Tj=25C V R=400V, IF =23A, diF/dt=1000A/s, T j=125C V R=400V, IF =23A, diF/dt=1000A/s, T j=150C
Reverse recovery softness factor
V R=400V, IF=23A, diF/dt=1000A/s, Tj=25C V R=400V, IF=23A, diF/dt=1000A/s, Tj=125C V R=400V, IF=23A, diF/dt=1000A/s, Tj=150C
4.4 4.8 5
-
Rev.2.4
Page 3
2009-09-28
IDP23E60
1 Power dissipation Ptot = f (TC) parameter: Tj 175 C
120
2 Diode forward current IF = f(TC) parameter: Tj 175C
45
W
A
90
35 30
P tot
75
IF
25 20 15 10 5 0 25 50 75 100 125 175
60
45
30
15
0 25
C TC
50
75
100
125
C TC
175
3 Typ. diode forward current IF = f (VF)
70
4 Typ. diode forward voltage VF = f (Tj)
2
V A
1.8 50
46A
VF
IF
-55C 25C 100C 150C
1.7 1.6 1.5
23A
40
30
1.4 1.3
11,5A
20
1.2 10 1.1 0 0 1 -60
0.5
1
1.5
V VF
2.5
-20
20
60
100
160 C Tj
Rev.2.4
Page 4
2009-09-28
IDP23E60
5 Typ. reverse recovery time trr = f (diF/dt) parameter: V R = 400V, T j = 125C
500
6 Typ. reverse recovery charge Qrr =f(diF/dt) parameter: VR = 400V, Tj = 125 C
2100
nC ns
1900 400 1800
46A
350
Qrr
trr
46A 23A 11.5A
1700 1600 1500
23A
300 1400 250 1300 1200 200 1100 1000 900 100 200 300 400 500 600 700 800
11.5A
150
A/s 1000 di F/dt
800 200
300
400
500
600
700
800
A/s 1000
diF/dt
7 Typ. reverse recovery current Irr = f (diF/dt) parameter: V R = 400V, T j = 125C
24
8 Typ. reverse recovery softness factor S = f(diF /dt) parameter: VR = 400V, Tj = 125C
13
A
20 18 11 10 9 8 7 6 5 4 3 200
46A 23A 11.5A
16 14 12 10 8 6 4 200
46A 23A 11.5A
Irr
300
400
500
600
700
800
A/s 1000 di F/dt
S
300
400
500
600
700
800
A/s 1000 diF/dt
Rev.2.4
Page 5
2009-09-28
IDP23E60
9 Max. transient thermal impedance ZthJC = f (tp) parameter : D = t p/T
10 1
IDP23E60
K/W
10 0
ZthJC
10 -1
D = 0.50 10 -2 0.20 0.10 single pulse 10 -3 0.05 0.02 0.01
10 -4 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
Rev.2.4
Page 6
2009-09-28
IDP23E60
Outline drawing: TO220-2-1
Rev.2.4
Page 7
2009-09-28
IDP23E60
Published by Infineon Technologies AG 81726 Munich, Germany 81726 Munchen, Germany (c) 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev.2.4
Page 8
2009-09-28

▲Up To Search▲

Price & Availability of IDP23E6009

	To Download IDP23E6009 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .